MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) is a common semiconductor device that uses electric field effects to control its current,and can be widely used in analog circuits and digital circuits.MOSFET can be made of silicon,and can also be made of graphene,carbon nanotubes and other materials,and it is a hot spot in the research of materials and devices.Mosfet testing parameters usually include input/output characteristic curve,threshold voltage VGS(th),leakage current IGSS,IDSS, breakdown voltage VDSS,low-frequency mutual conductance gm,output resistance RDS, etc.
Common problems in mosfet test
Affected by the device structure itself,researchers or test engineers in the laboratory often encounter the following problems during mosfet testing:
(1) Since the MOSFET is a multi-port device,multiple measurement modules need to be tested together, and the dynamic current range of the MOSFET is large, the test needs a wide range, and the measurement range of the measurement module needs to be able to switch automatically;
(2) The leakage current of the gate oxide has a great relationship with the quality of the gate oxide.If the leakage current increases to a certain level,it will form a breakdown and cause device failure.Therefore, the smaller the leakage current of the MOSFET,the better, and high-precision equipment is required for testing;
(3) As the MOSFET feature size becomes smaller and the power becomes larger, the self-heating effect becomes an important factor affecting its reliability, and the pulse test can reduce the self-heating effect,and the I-V test of the MOSFET using the pulse mode can be accurate Evaluate,characterize its properties;
(4) The capacitance test of MOSFET is very important,and it is closely related to its application in high frequency.The C-V curves are different at different frequencies,and it is necessary to conduct C-V tests at multiple frequencies and multiple voltages to characterize the capacitance characteristics of MOSFETs.
But we can solve these problems by using PRECISE S series high-precision source measure unit and P series high-precision bench-top pulse source measure meters during mosfet testing.
